Effective spin diffusion across hugely lattice mismatched heterointerfaces

Injection of spin polarized carriers from a diluted magnetic semiconductor (ZnMnTe) to non-magnetic semiconductor (GaInAs quantum well) has been demonstrated by observing 22% degree of circular polarization in magneto photoluminescence measurements. The degree of the circular polarization reflecting the degree of carriers spin alignment, shows that spin polarized carriers are able to diffuse under optical excitation from Zn0.97Mn0.03Te spin aligner to Ga0.8In0.2As QW via a View the MathML source of GaAs spacer conserving their polarization despite a high (View the MathML source) density of dislocations present at the interface.