Title of article :
Micro-Raman scattering study of Ga1−xMnxAs
Author/Authors :
W Limmer، نويسنده , , M Glunk، نويسنده , , W Schoch، نويسنده , , P Koder، نويسنده , , R Kling، نويسنده , , R Sauer، نويسنده , , A Waag، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Abstract :
Ga1−xMnxAs layers with Mn concentrations 0%⩽x⩽2.7% grown on View the MathML source substrates by low temperature molecular beam epitaxy were studied using micro-Raman spectroscopy. The layers were identified as p-type and an estimate of the hole densities was made by a full line shape analysis of the coupled plasmon-LO-phonon modes. The line width of the TO-phonon mode as a function of the Mn concentration was determined by spatially resolved measurements on cleaved (110) side faces.
Keywords :
Micro-Raman spectroscopy , GaMnAs , Carrier density
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
