Title of article
High-mobility electrons in modulation-doped AlAs quantum wells
Author/Authors
E.P. De Poortere، نويسنده , , Y.P. Shkolnikov، نويسنده , , M. Shayegan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
3
From page
646
To page
648
Abstract
We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to View the MathML source. Fractional quantum Hall states at first- and second-order filling factors, and up to View the MathML source, are observed. Shubnikov–de Haas oscillations of high-density samples reveal that electrons occupy two X-point valleys.
Keywords
Fractional quantum Hall effect , 2D electron system , Aluminum arsenide
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050384
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