Title of article :
High-mobility electrons in modulation-doped AlAs quantum wells
Author/Authors :
E.P. De Poortere، نويسنده , , Y.P. Shkolnikov، نويسنده , , M. Shayegan، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Abstract :
We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to View the MathML source. Fractional quantum Hall states at first- and second-order filling factors, and up to View the MathML source, are observed. Shubnikov–de Haas oscillations of high-density samples reveal that electrons occupy two X-point valleys.
Keywords :
Fractional quantum Hall effect , 2D electron system , Aluminum arsenide
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
