Analysis of the resistance of two-dimensional holes in SiGe over a wide temperature range

The temperature dependence of a system exhibiting a ‘metal–insulator transition in two dimensions at zero magnetic field’ (MIT) is studied up to View the MathML source. Using a classical scattering model we are able to simulate the non-monotonic temperature dependence of the resistivity in the metallic high density regime. We show that the temperature dependence arises from a complex interplay of metallic and insulating contributions contained in the calculation of the scattering rate 1/τD(E,T), each dominating in a limited temperature range.