Title of article :
Negative magnetoresistance of SiGe quantum wells doped with boron
Author/Authors :
R. Zobl، نويسنده , , E. Gornik، نويسنده , , I.V. Altukhov، نويسنده , , E.G. Landsberg، نويسنده , , N.G. Zhdanova، نويسنده , , K.A. Korolev، نويسنده , , M.S. Kagan، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Abstract :
Negative magnetoresistance is observed in boron-doped SiGe/Si quantum-well structures. The effect of a random potential caused by charged boron δ-layers in barriers on quantum corrections to the conductivity is found. Elastic and inelastic scattering times of holes as well as the magnitude of the random potential are determined.
Keywords :
Quantum corrections to the conductivity , Negative magnetoresistance , Quantum well
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
