Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots

Magneto-tunnelling for holes was studied in SiGe/Si/SiGe heterostructures with Ge quantum dots of the ‘hut cluster’ type in the middle of the Si-layer. At temperatures below View the MathML source two different transport regimes can be distinguished in the current–voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current–voltage characteristics. The influence of different layer structures is discussed.