Spin-dependent single-hole tunneling in self-assembled silicon quantum rings

We study the quantum conductance revealed by the quantum wire embedded within one of the arms of the Aharonov–Bohm (AB) ring that exhibits a weak localisation regime. The AB ring is prepared inside self-assembled silicon quantum well of the p-type between δ-barriers on the n-type Si(100) surface. The coherence of the single-hole transport and negative magnetic resistance effect is demonstrated. The positive/negative transformation of the magnetoresistance is found by the electrically detected NMR of the 29Si nuclei in the weakest magnetic fields, which seems to be caused by the effect of the nuclear spin polarisation on a weak antilocalisation.