Fast electron relaxation times in coupled double quantum well structures

We study the electron–electron interaction induced energy-dependent inelastic carrier relaxation processes of fast electrons and their corresponding lifetimes in doped semiconductor coupled double quantum well nanostructures within the two subband approximation at zero temperature. The lifetime of these electrons is obtained and studied by using many-body theory based upon generalized multisubband GW approximation. The imaginary part of the full self-energy matrix is calculated by expanding in the dynamically RPA screened Coulomb interaction. We also comment on the effects of structural asymmetry and tunneling between the layers.