High-field electron transport in GaAs/AlxGa1−xAs p–i–n–i–p-structures investigated by ultrafast absorption changes

High-field electron transport is studied in a GaAs/AlxGa1−xAs p–i–n–i–p-structure with a specially designed composition profile. Electron transfer in real space and energy relaxation is investigated via time-resolved measurements using various probe energies. We observe a transfer time of View the MathML source for the transport of electrons over View the MathML source. This time is found to be nearly independent of the reverse bias voltage. The experimental findings are in good agreement with Monte Carlo simulations.