Fabrication of 3.9–4.2 μm mid-infrared surface emitting PbSe/PbEuTe quantum dot lasers using molecular beam epitaxy

The fabrication of 3.9–View the MathML source mid-infrared surface emitting PbSe quantum dot lasers is reported. The self-assembled PbSe quantum dots are produced molecular beam epitaxy of PbSe on 5.4% lattice-mismatched PbEuTe barrier layers. The whole laser structure, grown on (111) oriented BaF2 substrates, consists of two high reflectivity epitaxial EuTe/PbEuTe Bragg mirrors and a self-organized PbSe/Pb1−xEuxTe quantum dot superlattice as active region in between. Narrow laser emission at 4.2–View the MathML source induced by optical pumping is achieved at temperatures up to View the MathML source. The observed simultaneous two-mode laser emission indicates a width of the inhomogeneously broadened PbSe dot gain spectrum of about View the MathML source.