Room temperature lasing of quantum wire VCSELs by optical pumping grown on the (7 7 5)B GaAs substrates by MBE

We report optically pumped lasing action at room temperature (RT) of self-organized quantum wire (QWR) vertical cavity surface emitting lasers (VCSELs) grown on (775)B-oriented GaAs substrates by molecular beam epitaxy (MBE). The (775)B InGaAs QWRs have a regularly corrugated AlAs-on-InGaAs upper interface (average lateral period of View the MathML source and a vertical amplitude of View the MathML source) and a flat InGaAs-on-AlAs lower interface. The VCSELs with an active region containing five (775)B InGaAs QWR layers (well width of View the MathML source were fabricated and they were optically pumped by a continuous wave titanium-doped sapphire laser, and they oscillated at RT with threshold pump power of View the MathML source, and their lasing wavelength was View the MathML source. This is the first lasing action at RT in self-organized QWR VCSELs using surface corrugation on vicinal substrates, to our knowledge.