Resonant states and THz lasing in SiGe quantum well structures δ-doped with boron

An intense terahertz emission of stimulated character from boron-δ-doped Si/Si1−xGex/Si quantum well structures has been observed. The stimulated emission arises under strong electric fields (300–View the MathML source applied parallel to interfaces. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.