Title of article :
A novel electrical property of three-terminal ballistic junctions and its applications in nanoelectronics
Author/Authors :
H.Q. Xu، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2002
Pages :
4
From page :
942
To page :
945
Abstract :
A room-temperature electrical property of three-terminal ballistic junctions (TBJs) is predicted. For a symmetric TBJ, it is shown that when finite voltages V and −V are applied to the left and right branches, the voltage output Vc from the central branch will always be negative. This characteristic appears even when the symmetry in the TBJ is broken, provided that |V| is larger than a threshold. Applications of these devices in nanoelectronics are proposed.
Keywords :
Nonlinear transport , Rectification , Logic devices , Three-terminal ballistic junctions
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2002
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050454
Link To Document :
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