Author/Authors :
M. Schmidbauer، نويسنده , , M. Hanke، نويسنده , , F. Hatami، نويسنده , , William P. Schafer، نويسنده , , H. Raidt، نويسنده , , D. Grigoriev، نويسنده , , T. Panzner، نويسنده , , W.T Masselink، نويسنده , , R. Kohler، نويسنده ,
Abstract :
We report on free-standing InP quantum dots grown on (0 0 1) InGaP/GaAs which exhibit a pronounced size anisotropy with respect to the [110] and [View the MathML source] directions. X-ray diffuse scattering together with respective kinematical simulations using elasticity theory makes it possible to determine with high accuracy the geometric aspect ratios of island height and island base widths. The influence of these ratios on the strain field inside the quantum dots will be discussed.
