Fabrication and elastic properties of InAs freestanding structures based on InAs/GaAs(1 1 1)A heteroepitaxial systems

InAs semiconducting freestanding structures, such as beams, Hall bars and cantilevers, were successfully fabricated based on InAs/GaAs(1 1 1)A heteroepitaxial systems with extremely high slenderness ratios (length/thickness) of up to 103. Without any intentional doping, the structures showed clear n-type electric conductivity with increased carrier concentration and mobility in comparison with similarly grown heterostructure samples. The mechanical motion of cantilevers was electrically activated and clear resonance characteristics confirmed, indicating that these structures are promising for the application in the field of micro/nano electromechanical systems.