Title of article
Photogalvanic effects in quantum wells
Author/Authors
S.D Ganichev، نويسنده , , E.L. Ivchenko، نويسنده , , W Prettl، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
6
From page
166
To page
171
Abstract
Circular and linear photogalvanic effects induced by far-infrared radiation have been investigated in both n-type and p-type quantum wells (QWs) of various point symmetry groups. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs which results in a directed motion of free carriers in the plane of a QW perpendicular to the direction of light propagation. Due to selection rules the direction of the current is determined by the helicity of the light and can be reversed by switching the helicity from right to left.
Keywords
Quantum wells , Photogalvanic effect , Spin orientation
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050557
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