Reverse biased porous silicon light-emitting diodes for optical intra-chip interconnects

We have reported recent progress in development of the integrated optoelectronic unit on a Si chip. The developed optoelectronic unit includes a porous Si light-emitting diode (LED) connected with a photodetector by an alumina waveguide. Main attention has been devoted to the enhancement of LED parameters. Quantum efficiency as high as 0.4% has been reached. The delay time of View the MathML source and the rise time of View the MathML source have been measured for the diodes. Further improvements are also discussed.