Title of article
New insights on amorphous silicon-nitride microcavities
Author/Authors
V. Ballarini، نويسنده , , G. Barucca، نويسنده , , E. Bennici، نويسنده , , C.F. Pirri، نويسنده , , C. Ricciardi، نويسنده , , E. Tresso، نويسنده , , F. Giorgis، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
5
From page
591
To page
595
Abstract
All amorphous silicon-nitride planar optical microcavities operating in the visible range have been grown by plasma enhanced chemical vapor deposition. The luminescence intensity of the N-rich silicon-nitride layer from a microcavity with 6 period distributed Bragg reflectors (DBRs) is two order of magnitude higher than that of the luminescent layer without the cavity. Moreover, a strong directionality of the microcavities emission can be observed. Such results can be ascribed to the anisotropic optical density of states induced in the Fabry–Perot structure. The quality factors of the resonators are strictly correlated to the number of periods of the DBRs.
Keywords
Multilayers , Amorphous Silicon based alloys , Photoluminescence , Optical properties
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050633
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