Title of article :
Tunnel spectroscopy of small Al particle
Author/Authors :
Youiti Ootuka، نويسنده , , Teppei Kurosawa، نويسنده , , Akinobu Kanda، نويسنده , , Yuri Pashkin، نويسنده , , Jaw Shen Tsai، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Pages :
2
From page :
19
To page :
20
Abstract :
We present experimental results of the current–voltage characteristics of a lithographically made single-electron transistor with View the MathML source island. We find a stepwise current increase above the threshold voltage, which is attributed to the discrete energy levels in the island. The distribution of level spacing has a tendency that supports the level repulsion effect.
Keywords :
Single-electron transistor , Small particle , random matrix theory , Level quantization
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2003
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050645
Link To Document :
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