Spin precession observation in quantum corrections to resistance of Si0.7Ge0.3/Si0.2Ge0.8 heterostructure with 2DHG

The two-dimensional hole gas (2DHG) magnetoresistivity of a Si0.7Ge0.3/Si0.2Ge0.8 heterostructure in a wide range of temperatures T=0.335–View the MathML source and transport currents I=100–View the MathML source is measured. In the vicinity of zero magnetic field, a sharp and positive in sign feature on smooth negative magnetoresistance is observed at the lowest temperatures. The amplitude of this feature quickly fades with increasing temperature and transport current. For the analysis of the experimental data the theory of weak localization for 2DHG is applied.The values of τso and τtr obtained are used for the first time to define zero magnetic field splitting in the hole energy spectrum for a Si0.7Ge0.3/Si0.2Ge0.8 heterostructure: View the MathML source.