Longitudinal magnetoresistance of 270 nm-diameter Bismuth nanowires

We study the longitudinal magnetoresistance of 270-nm diameter bismuth nanowire arrays embedded in an alumina matrix which are capped with layers of pure Bi that have low contact resistance. At intermediate fields, the LMR presents a broad maximum that is discussed in terms of the interplay between the carrierʹs cyclotron radius and scattering at the wire walls and the onset of Shubnikov–de Haas oscillations.