Sizeable enhancement of anti-weak localization effect in In2O3−x thin film caused by H2 gas mixing in N2 gas atmosphere on heat treatment

Through magneto-conductance measurements, we have observed sizeable enhancement of anti-weak localization (AWL) effect in In2O3−x thin film (View the MathML source) caused by H2 gas mixing (10%) in N2 gas (90%) atmosphere on the heat treatment (HT). In case of the HT in pure N2 gas, the AWL effect is recognized, but is very small. With respect to those experimental results, we conclude that interstitial indium atoms in In2O3−x are effectively generated and the AWL effect due to the spin–orbit interaction is come up.