MOSFETs below 10 nm: quantum theory

We have carried out numerical modeling of sub-10-nm dual-gate SOI MOSFETs with ultra-thin, intrinsic (undoped) channel connecting bulk, n+-doped source and drain, using self-consistent solution of the 1D Schrödinger equation and 2D Poisson equation for electrons within the channel. The results confirm that transistors with gate as short as View the MathML source still can provide voltage gain above unity, though below View the MathML source their characteristics are extremely sensitive to the device dimensions.