On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs

The drain currents of nanometer double-gate MOSFETs with gate lengths in the range from 100 to View the MathML source are calculated using a hierarchy of simulation approaches. By comparing Monte Carlo (MC), drift-diffusion (DD), and hydrodynamic (HD) simulation results the suitability of the DD and HD models for the investigation of the on- and subthreshold currents of nano-scaled MOSFETs is tested. Modifications of the velocity-field characteristics in the DD simulations are suggested to improve the accuracy of the DD model.