Transport study of ultra-thin SOI MOSFETs

We present the results of detailed transport measurements on a silicon-on-insulator (SOI) metal-oxide–semiconductor field-effect transistor (MOSFET) in a wide range of temperature (T, View the MathML source). The temperature dependence of the threshold voltage and low-field effective mobility (μeff) of the MOSFET is found to be consistent with that of a fully depleted, and strongly localized, MOSFET. The activation energy obtained from the temperature dependence of μeff suggests that the inversion layer is strongly perturbed by the presence of impurities at its back (Si/SiO2) interface. The transport of a View the MathML source-wide wire fabricated on the same SOI wafer exhibits oscillatory features and the origin is interpreted as the existence of unintentional Coulomb islands created by back interface impurities.