Scanning capacitance microscopy investigations of focused ion beam damage in silicon

In this article we explore the application of scanning capacitance microscopy (SCM) for studying focused ion beam (FIB) induced damage in silicon. We qualitatively determine the technologically important beam shape by measuring the SCM image of FIB processed implantation spots and by comparison of topographical and SCM data. Further, we investigate the question how deep impinging ions generate measurable damage below the silicon surface. For this purpose, trenches were manufactured using FIB and analyzed by SCM in cross-sectional geometry.