Title of article :
Electron–phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure
Author/Authors :
C. Prasad، نويسنده , , D.K. Ferry، نويسنده , , D. Vasileska، نويسنده , , H.H. Wieder، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Abstract :
Joule heating measurements are carried out over a wide range of temperatures on a two-dimensional electron gas fabricated in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system that has a View the MathML source wide In0.53Ga0.47As quantum well region. The energy loss rate is observed to be an indicator of the electron–phonon coupling processes in these systems. The temperature dependence of the energy loss rate is studied from View the MathML source to View the MathML source and points toward a possible dominant unscreened piezoelectric coupling to the acoustic modes over temperatures of 1–View the MathML source, with boundary scattering in the ohmic contacts gaining importance at very low temperatures. The temperature decay of the energy relaxation time exhibits a T−3 behavior at high temperatures that transitions to a T−1 at lower temperatures and tends to saturation at millikelvin levels.
Keywords :
Hot carriers , InA1As , Joule heating , InGaAs , Energy relaxation
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures