Title of article
Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems
Author/Authors
R.J. Nicholas، نويسنده , , P.A Shields، نويسنده , , R.A. Child، نويسنده , , L.J. Li، نويسنده , , E. Alphandéry، نويسنده , , N.J. Mason، نويسنده , , C Bumby، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
7
From page
204
To page
210
Abstract
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at View the MathML source.
Keywords
Quantum well , InSb , MOVPE , InAs , GaSb , Quantum dots
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050873
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