Author/Authors :
Wei Zhao، نويسنده , , R Lukic-Zrnic، نويسنده , , B.P Gorman، نويسنده , , R.L Cottier، نويسنده , , T.D Golding، نويسنده , , C.L Littler، نويسنده , , J.H Dinan، نويسنده , , L.A Almeida، نويسنده , , J.A Dura، نويسنده , , R.M Lindstrom، نويسنده , , H.F Schaake، نويسنده , , P Liao، نويسنده ,
Abstract :
Hg1−xCdxTe(x∼0.22) samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (View the MathML source) and subsequently annealed for View the MathML source in Hg overpressure to remove damage and reduce the presence of Hg vacancies. Extensive magnetotransport measurements were performed on these samples as part of an investigation into the use of elemental transmutation for efficient p-type doping of this material. The data were analyzed using a multi-carrier approach which incorporates various scattering mechanisms and the presence of two conduction channels of differing alloy content to describe the changes in the transport properties due to neutron irradiation.
Keywords :
Elemental transmutation , Magnetoconductivity tensor analysis , p-Type doping , HgCdTe