Title of article
Effect of structural defects on InSb/AlxIn1−x Sb quantum wells grown on GaAs (0 0 1) substrates
Author/Authors
T.D. Mishima، نويسنده , , J.C Keay، نويسنده , , N Goel، نويسنده , , M.A Ball، نويسنده , , S.J. Chung، نويسنده , , M.B. Johnson، نويسنده , , M.B. Santos، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
4
From page
260
To page
263
Abstract
We investigate oriented abrupt steps (OASs), a type of surface defect in InSb/AlxIn1−xSb quantum-well (QW) samples grown on GaAs (001) substrates. Previous atomic force microscopy studies have reported that the OASs are oriented along the [110] and View the MathML source directions and have an inclination angle of ∼5°–15° with respect to the sample surface. Our plan-view and cross-sectional transmission electron microscopy analyses reveal that the OASs are the terminal edges of threading micro-twins at the sample surface. Hall effect measurements indicate that the density of OASs correlates with the electron mobility in the InSb QWs.
Keywords
Transmission electron microscopy , InSb quantum wells , Structural defects , Electron mobility
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050884
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