Carrier-induced ferromagnetic order in the narrow gap III–V magnetic alloy semiconductor (In,Mn)Sb

Preparation and physical properties of p- and n-InMnSb epitaxial films with Mn contents up to 10% were studied with the aim of seeking phenomena induced by the spin exchange interaction between carrier and Mn spins. For p-type samples with Mneff=4.5×1020 and View the MathML source, carrier-induced ferromagnetic order with a Curie temperature of View the MathML source was observed. The sign of the anomalous Hall coefficient is found to be negative. Tellurium-doped n-type samples View the MathML source with net Mn contents of 10% are found to be paramagnetic.