Rashba spin-splitting in narrow gap III–V semiconductor quantum wells

Using Kaneʹs 8-band k·p theory and the envelope function approximation we derive a tight binding Hamiltonian for III–V semiconductor quantum well structures, which accurately models band structure and spin–orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum.