Title of article :
Resonance scattering on In impurity in Pb0.4Sn0.6Te solid solutions
Author/Authors :
Dmitri I. Popov، نويسنده , , Mohammed Z. Tahar، نويسنده , , Sergei A. Nemov، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Pages :
5
From page :
453
To page :
457
Abstract :
The Hall coefficient and resistivity were measured on a series of samples of InTe in Pb0.4Sn0.6Te solid solutions with varying indium content from 0 to View the MathML source. All samples show a p-type conductivity with the concentration of holes View the MathML source at View the MathML source. A considerable decrease of mobility calculated from the measurements was observed in the samples with high content of In. The contribution to the mobility, directly related to the scattering of holes into In atoms, was determined, and the scattering crosssection was estimated. We observed a drastic increase in the scattering crosssection with the rise of In content, which can be explained by the resonance scattering of holes into the band of quasi-local states of In. This result can also be explained with the use of the Breit–Wigner formula. The location of the In states in the valence band was also calculated using the Kane model.
Keywords :
Semiconductor , Solid solution , Electronic transport , Mobility , Resonance scattering
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2003
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050922
Link To Document :
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