Title of article :
UP-conversion of terahertz radiation induced by photon drag effect
Author/Authors :
Volodymyr Malyutenko، نويسنده , , Vitalii Borblik، نويسنده , , Victor Vainberg، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2003
Pages :
4
From page :
563
To page :
566
Abstract :
An all-optical approach to convert terahertz radiation (THz, wavelength λ1) into infrared (IR, peak wavelength λ2) is presented. We show that this up-conversion process is due to the photon drag effect induced by the THz radiation in intrinsic narrow-gap semiconductors followed by spatial redistribution of current carriers and band-to-band radiative recombination. The process results in non-selective high-speed (ns range rise/fall times) IR imaging of positive (conventional luminescence) and/or negative (negative luminescence) contrasts. Estimates made for an InSb pixelless converter at View the MathML source and moderate THz intensity (∼kW/cm2) show that this up-conversion process (with λ1/λ2>102) can be observed with a conventional thermal imaging camera.
Keywords :
Narrow-gap semiconductors , Photon drag , Terahertz detection , Negative luminescence , Up-conversion
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2003
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1050945
Link To Document :
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