Author/Authors :
A.G. Milekhin، نويسنده , , A.I Nikiforov، نويسنده , , M. Yu. Ladanov، نويسنده , ,
O.P. Pchelyakov، نويسنده , , D.N. Lobanov، نويسنده , , A.V Novikov، نويسنده , , Z.F. Krasilnik، نويسنده , , S Schulze، نويسنده , , D.R.T. Zahn، نويسنده ,
Abstract :
In this paper we present the results of a Raman study of Ge/Si quantum dot (QD) superlattices grown with different thicknesses of a Si interlayer and at different substrate temperatures. The built-in strain and atomic intermixing in the QDs are deduced from an analysis of optical phonon frequencies of the QDs obtained from Raman spectra of the structures.
Keywords :
Raman spectroscopy , Phonons , Quantum dots , Confinement
