Title of article :
The simulation study for the nanometer-scale selective growth of Si islands on Si(0 0 1) windows in ultrathin SiO2 films
Author/Authors :
A Ishii، نويسنده , , J Yamazoe، نويسنده , , T Aisaka، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Abstract :
The nanometer-scale selective growth of Si islands on Si(0 0 1) windows in ultrathin SiO2 films are studied using the kinetic Monte Carlo simulation. The growth of Si islands is reproduced in simulation where we assume that the migration barrier energy for Si adatom on SiO2 film is far lower than that on the Si surface at the window.
Keywords :
simulation , Pattern formation , SiO2 , Si(0 0 1) , Dot
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
