Magneto-photoluminescence study of InGaAs/InP and InGaAs/AlAsSb quantum wells

We report on a magneto-photoluminescence study of InGaAs/InP stacked-quantum wells (ST-QWs) and InGaAs/AlAsSb multiple-quantum wells (MQWs). The InGaAs/InP ST-QWs show clear well-width dependence of the exciton binding energy. The reduced mass of the View the MathML source InGaAs/AlAsSb MQWs is smaller than that of the 16-nm InGaAs/InP QW, contrary to the order of the well-size dependence. This could be caused by the mixing of the heavy hole- and light hole band, due to the small valence band offset in InGaAs/AlAsSb MQWs. Measured exciton binding energies slightly deviated from the theoretical values calculated based on an analytical model, which takes into account the anisotropic interactions between electrons and holes in a 3D space. This deviation suggests that the excitons in QWs are not perfect 3D excitons.