Author/Authors :
A.E. Belyaev، نويسنده , , O Makarovsky، نويسنده , , D.J Walker، نويسنده , , L Eaves، نويسنده , , C.T. Foxon، نويسنده , , S.V. Novikov، نويسنده , , L.X Zhao، نويسنده , , R.I Dykeman، نويسنده , , S.V Danylyuk، نويسنده , , S.A. Vitusevich، نويسنده , , M.J. Kappers، نويسنده , , J.S Barnard، نويسنده , , C.J. Humphreys، نويسنده ,
Abstract :
GaN/AlGaN double barrier resonant tunnelling structures grown by molecular beam epitaxy on GaN templates have been studied. Peaks in the current–voltage (I(V)) characteristics are observed, which are similar to resonant peaks seen in conventional III–V-based devices. However, the behaviour of the peaks in I(V) depend upon the previous charge state of the device produced by electrical bias. Current instabilities are also observed at low voltages. The possible origin of the peaks in the I(V) at room temperature and View the MathML source is discussed.
