Title of article :
Physics and characteristics of a lateral p–n junction tunneling transistor
Author/Authors :
Vladimir Vyurkov، نويسنده , , Victor Ryzhii، نويسنده , , Pablo O. Vaccaro، نويسنده , , Tahito Aida، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Abstract :
The explicit model of a lateral p–n junction tunneling transistor is developed and the current–voltage characteristics are obtained.
Keywords :
Tunneling transistor , Quantum well , Lateral p–n junction
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures
