Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure

We have fabricated n- as well as p-channel in-plane gate transistors by focused compensation doping of a p-doped pseudomorphic GaAs/In0.08Ga0.92As/Al0.33Ga0.67As heterostructure. Both types show transistor operation with higher drain currents for the n-channel version. Both types could be completely depleted. Only the n-channel transistors show drain current saturation with the increasing drain–source voltage.