Title of article :
Imaging of the (Mn2+3d5 + hole) complex in GaAs by cross-sectional scanning tunneling microscopy
Author/Authors :
A.M. Yakunin، نويسنده , , A.Yu Silov، نويسنده , , P.M. Koenraad، نويسنده , , W Van Roy، نويسنده , , J De Boeck، نويسنده , , J.H. Wolter، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
4
From page :
947
To page :
950
Abstract :
We present results on the direct spatial mapping of the wave function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope. We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feature. We attribute this feature to a hole, weakly bound to the Mn ion forming the (Mn2+3d5 + hole) complex.
Keywords :
manganese , Acceptor , Spintronics , GaAs , Magnetic semiconductors
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2004
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051107
Link To Document :
بازگشت