Not-step-like density of states and carrier distribution of conduction-band, narrow-to-wide dilute magnetic semiconductor quantum wells under in-plane magnetic field

We analyze the important changes induced in the density of states of narrow-to-wide conduction-band dilute magnetic semiconductor quantum wells subjected to an in-plane magnetic field, B. We show quantitatively that the DOS diverges significantly from the famous step-like two-dimensional electron gas form, by providing results for many values of B and grades of spatial localization. This introduces changes in the pertinent electronic properties. The self-consistent approach is indispensable and the eigenvalue problem has to be solved for each subband index i, spin σ, and in-plane wave vector, e.g. kx. We can select the appropriate parameters so that the structure is populated by carriers of spin-down or exploit the effect of the depopulation of the higher spin-subbands to eliminate carriers with spin-up.