Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier

We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at View the MathML source around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented.