Title of article
Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier
Author/Authors
D Chiba، نويسنده , , F Matsukura، نويسنده , , H Ohno، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
966
To page
969
Abstract
We have investigated the properties of tunneling magnetoresistance (TMR) of (Ga,Mn)As trilayer structures with a GaAs intermediary barrier layer. TMR ratio of 290% is observed at View the MathML source around zero applied bias voltage. The bias dependence of TMR ratio as well as the temperature-dependent anisotropic behavior are presented.
Keywords
(Ga , Mn)As , Tunneling magnetoresistance , Spin polarization
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051111
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