Light-emitting diodes based on GaMnAs/GaAs heterostructures

We study a modified p–i–n diode based on the Ga1−xMnxAs/GaAs heterostructure system. We show that the incorporation of an intermediate Ga1−xMnxAs layer with x=1% in the intrinsic region of a p–i–n diode produces an intense electroluminescence (EL) signal due to electronic transitions involving holes bound to Mn-related states. The intensity of the EL signal is weakly affected by temperature over the range from 5 to View the MathML source, thus indicating that the Mn-related hole states act as efficient sites for radiative recombination even at room temperature despite the strong disorder in the Ga1−xMnxAs at relatively high values of x.