Title of article
Quantum Hall effect in a two-dimensional electron system bent by 90°
Author/Authors
M. Grayson، نويسنده , , D. Schuh، نويسنده , , M. Bichler، نويسنده , , M. Huber، نويسنده , , G. Abstreiter، نويسنده , , L. Hoeppel، نويسنده , , J. Smet، نويسنده , , K. von Klitzing and K. Eberl ، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
181
To page
184
Abstract
Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90° corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with unequal filling factor combinations which can all be explained using the standard Landauer–Büttiker edge channel picture. The success of this description confirms the realization of the first non-planar quantum Hall edge geometry.
Keywords
Bent quantum well , Edge states , Counter-propagating , Co-propagating , Quantum Hall effect
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051187
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