Title of article :
Inelastic light scattering on few-electron quantum-dot atoms
Author/Authors :
T. Brocke، نويسنده , , M.-T. Bootsmann، نويسنده , , B. Wunsch، نويسنده , , M. Tews، نويسنده , , D. Pfannkuche، نويسنده , , Ch. Heyn، نويسنده , , W. Hansen، نويسنده , , D. Heitmann، نويسنده , , Jan C. Schuller، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Abstract :
We investigate InAs self-assembled quantum dots (SAQD) by resonant inelastic light scattering. By applying a gate voltage between a metallic front gate and a back electrode, we can charge the quantum dots with single electrons (1–6). With resonant inelastic light scattering, we can directly observe the elementary electronic excitations of the few-electron quantum-dot atoms, which are formed by the SAQD. We observe excitations which we identify as transitions of electrons from the s- to the p-shell (s–p transitions) and from the p- to the d-shell (p–d transitions) of the quasiatoms. We find that the s–p transition energy decreases when the p-shell is filled with 1–4 electrons. This can be explained as an effect of Coulomb interaction, which is confirmed by calculations of the few-electron system, using exact numerical diagonalization.
Keywords :
Inelastic light scattering , Quantum dots , Electronic excitations
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures