Title of article :
Kondo effect of an antidot in the integer quantum Hall regime: a microscopic calculation
Author/Authors :
H.-S. Sim، نويسنده , , N.Y. Hwang، نويسنده , , M. Kataoka، نويسنده , , Hangmo Yi، نويسنده , , M.-S. Choi، نويسنده , , S.-R. Eric Yang، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
4
From page :
554
To page :
557
Abstract :
An electron antidot system is an open geometry problem and often requires heavy calculations to compute its physical properties. Such a difficulty can be avoided by transforming an electron antidot system to a system of hole quantum dot since the transformed system contains only a finite number of confined holes. Using this transformation, we present a microscopic approach to study electronic properties of an antidot in the integer quantum Hall regime. Based on this approach we discuss various conditions under which the Kondo effect may be present.
Keywords :
Antidot , Kondo effect , Quantum Hall effect
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2004
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051278
Link To Document :
بازگشت