Title of article :
Collective excitations in InAs quantum well intersubband transitions
Author/Authors :
J. Li، نويسنده , , C.Z. Ning، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Pages :
4
From page :
628
To page :
631
Abstract :
Intersubband transitions in semiconductor quantum well are studied using a density matrix theory that goes beyond the Hartree–Fock approximation by including the full second order electron–electron scattering terms in the polarization equation for the first time. Even though the spectral features remain qualitatively similar to the results obtained with dephasing rate approximation, significant quantitative changes result from such a more detailed treatment of dephasing. More specifically, we show how the interplay of the two fundamental collective excitations, the Fermi-edge singularity and the intersubband plasmon, leads to significant changes in lineshape as the electron density varies.
Keywords :
Carrier scattering , Fermi edge singularity , Intersubband plasmon , Intersubband transitions , Many-body effects
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Serial Year :
2004
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Record number :
1051296
Link To Document :
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