Fabrication of two-dimensional p–n junctions formed by compensation doping of p-modulation doped GaAs/InyGa1−yAs/AlxGa1−x As heterostructures

We have fabricated two-dimensional p–n junctions by local Si-implantation doping of a p-modulation doped GaAs/InyGa1−yAs/AlxGa1−xAs heterostructure. The base material has at View the MathML source a hole density of View the MathML source and the mobility is View the MathML source. The local compensation doping was done by focused ion beam implantation of Si and the resulting two-dimensional electron gas had a carrier density of View the MathML source with a mobility of View the MathML source. The current–voltage characteristic shows clear rectifying behavior. The capacitance of the junctions is View the MathML source and depends only weakly on the reverse bias. Electro-luminescence can be observed at room temperature as well as at low temperatures.