Title of article :
Raman spectrum of array-ordered crystalline silicon nanowires
Author/Authors :
Jianxun Liu، نويسنده , , Junjie Niu، نويسنده , , Deren Yang، نويسنده , , Mi Yan، نويسنده , , Jian Sha، نويسنده ,
Issue Information :
دوهفته نامه با شماره پیاپی سال 2004
Abstract :
Array-ordered single-crystal silicon nanowires were fabricated by the nanochannel-aluminal and CVD method. The average length and diameter of the nanowires is about 10 μm and 60 nm, respectively. A study of the Raman spectrum of the nanowires shows that the Raman shift to low frequency is due to the quantum confinement effect, which is discussed by using the phonon confinement model. Also we determine the peaks of the Raman spectrum to be corresponding to that of crystal silicon (c-Si).
Keywords :
Raman spectra , Phonon confinement model , Nanowires
Journal title :
Physica E Low-dimensional Systems and Nanostructures
Journal title :
Physica E Low-dimensional Systems and Nanostructures